MoO3 induces p-type surface conductivity by surface transfer doping in diamond

Abstract

Surface transfer doping of diamond using high electron affinity transition metal oxides (TMOs), such as MoO3, has emerged as a key enabling technology for the development of diamond-based surface two-dimensional (2D) electronics. However, the omission of a critical pre-annealing step in the device fabrication process to remove atmospheric adsorbates prior to TMO deposition, as seen in numerous studies, makes the role of TMOs ambiguous in light of air-induced surface conductivity, preventing a full understanding of the intrinsic surface transfer doping behavior of TMO-based surface acceptors. Here, using in-situ four-probe electrical measurements we explicitly show the insulating-to-conductin..